当n~+-i-n~+型晶体管的基区宽度大于载流子扩散长度时,在磁场中它的集电极电流具有很高的磁灵敏度.本文从输运基区载流子连续方程式出发导出了载流子在磁场中的分布,从而导出了集电极电流、电流增益α和β随磁场变化的关系式,并建立了磁灵敏度公式.本文将理论同锗长基区滋晶体管的实验曲线和数据进行了比较,其结果表明理论和实验曲线基本相符合. When n ~ + -in ~ + transistor base width is greater than the carrier diffusion length, its collector current in the magnetic field has a high magnetic sensitivity.This paper derived from the transport base region carrier continuity equation The distribution of carriers in the magnetic field is deduced, and the relationship between the collector current, the current gain α and β with the change of the magnetic field is derived and the magnetic sensitivity formula is established.In this paper, The data are compared, the results show that the theoretical and experimental curves are basically consistent.