用电化学脉冲腐蚀方法制备了多孔硅微腔 ,讨论了脉冲电化学腐蚀的参数——周期、占空比对多孔硅多层膜制备的影响 ,并用了以 HF酸扩散为基础的多孔硅动态腐蚀机理对实验结果进行解释 ,认为在用电化学脉冲腐蚀法制备多孔硅微腔的过程中 ,不但要考虑到 HF酸对硅的纵向电流腐蚀 ,也要考虑到 HF酸对多孔硅硅柱的横向浸泡腐蚀 .可通过选取合适的周期、占空比 ,使二者对多孔硅的作用达到适中 ,以制备出高质量的多孔硅多层膜和微腔 .并用正交实验法优化了制备多孔硅微腔的参数 ,根据优化的实验参数 ,制备出了发光峰半峰宽为 6 nm的多孔硅微腔 Porous silicon microcavities were prepared by electrochemical pulse etching. The effects of parameters of pulse electrochemical corrosion, such as cycle and duty cycle, on the preparation of porous silicon multilayer films were discussed. Porous silicon dynamics based on HF acid diffusion Corrosion mechanism of the experimental results to explain that the use of electrochemical pulse etching porous silicon microcavity preparation process, not only to consider the longitudinal HF HF acid corrosion, but also to take into account the HF acid on the porous silicon silicon column Lateral immersion corrosion can be selected by the appropriate cycle, duty cycle, so that the two of the role of porous silicon to achieve moderate, to prepare high-quality porous silicon multilayer film and microcavity. And orthogonal experimental method for the preparation of porous Based on the optimized experimental parameters, a porous silicon microcavity with a half-width of 6 nm was fabricated