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提出了一种用来提高短沟道MOS管性能的非对称内表面氧化层结构。该结构是在MOS管的源端附近生长一层厚的内表面氧化层,以抑制载流子迁移率的降低,同时,在MOS管的漏端附近生长一层薄的内表面氧化层,以抑制器件的短沟道效应。使用TCAD软件进行仿真和分析,结果显示,与对称内表面氧化层结构相比,非对称内表面氧化层结构具有更好的导通-关断特性。对器件进行优化,当源端较厚的内表面氧化层占总氧化层的比例为15%左右时,器件的性能得到最大幅度的提高。在相同的关断电流下,与对称内表面氧化层器件相比,非对称内表面氧化层器件的导通电流提高5%~15%。
An asymmetric inner surface oxide layer structure for improving the performance of a short channel MOS transistor is proposed. In this structure, a thick inner surface oxide layer is grown near the source end of the MOS transistor to suppress the decrease of carrier mobility. Meanwhile, a thin inner surface oxide layer is grown near the drain end of the MOS transistor to Suppress the short channel effect of the device. Using TCAD software for simulation and analysis, the results show that the asymmetric inner surface oxide structure has better on-off characteristics than the symmetric inner surface oxide structure. Optimize the device, when the source end of the thick oxide layer thickness of the total oxide layer ratio of about 15%, the device performance has been greatly improved. In the same turn-off current, asymmetric internal surface oxide devices compared with the symmetrical internal surface oxide device current increased by 5% to 15%.