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利用一种拟合方法测量FP腔半导体激光器的腔内损耗和准费米能级差 .从放大的自发发射谱 ,利用Cassidy方法得到用于拟合过程的增益谱和单程放大的自发发射谱 .利用上述方法 ,测出的 15 5 0nmInGaAsP量子阱脊型波导结构激光器的腔内损耗大约为 2 4cm-1.
A fitting method was used to measure the cavity loss and quasi-Fermi level difference in the FP cavity semiconductor laser.From the amplified spontaneous emission spectra, the gain spectrum and the one-way amplified spontaneous emission spectra were obtained by Cassidy method. The above method, measured 1550nmInGaAsP quantum well ridge waveguide waveguide cavity structure loss of about 2 4cm-1.