论文部分内容阅读
据日本《电子材料》1992年第2期报道,日本三菱电机光、微波器件研究所采用电子波干涉效应的多重量子势垒研制成以前不可能达到的高温(90℃)、稳定输出10mW光的红色可见光半导体激光器(波长670nm)。以前,大功率工作的半导体激光器在芯片内产生耗散功率,这样就会引起作激光器振荡的有源层温度超过周围的环境温度。由于温度上升,就会引起半导体激光器的阈值电流上升,激光器产生振荡便困难。现已用多重量子势垒,根据电子波动性的电子
According to Japan’s “Electronic Materials” 1992 the second period reported that Japan’s Mitsubishi Electric Institute of light and microwave devices using the wave interference effect of multiple quantum barrier developed into a previously impossible high temperature (90 ℃), stable output 10mW light Red visible semiconductor laser (wavelength 670nm). In the past, high-powered semiconductor lasers produced dissipated power within the chip, causing the temperature of the active layer to oscillate beyond the ambient temperature of the environment. As a result of the temperature rise, the threshold current of the semiconductor laser will rise, making it difficult for the laser to oscillate. Is now using multiple quantum barrier, based on the electronic volatility of electrons