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MOS器件栅氧化层,是在有氯源1,1,1三氯乙烷(TCA)的条件下生长的。本文已给出击穿电压(BV)与TCA克分子浓度的关系曲线。为了考察用三氯乙烷代替三氯乙烯(TCE)是否适合,将上述结果与同样条件下生长的三氯乙烯氧化层进行了比较。业已发现,击穿电压强烈地依赖于三氯乙烷和三氯乙烯的克分子浓度。在p型硅上的TCA/TCE氧化层击穿电压与TCA/TCE克分子浓度的关系曲线上,存在一个峰值。此外,在n型硅中,TCA氧化层具有比TCE氧化层相对稳定的击穿电压BV。
MOS device gate oxide is grown in the presence of a chlorine source 1,1,1 trichloroethane (TCA). This article has given breakdown voltage (BV) and TCA molar concentration curve. In order to examine the suitability of trichloroethane instead of trichlorethylene (TCE), the above results were compared with trichlorethylene oxide grown under the same conditions. It has been found that the breakdown voltage strongly depends on the molar concentrations of trichloroethane and trichlorethylene. On the p-type silicon TCA / TCE oxide breakdown voltage and TCA / TCE molar concentration curve, there is a peak. In addition, in n-type silicon, the TCA oxide layer has a breakdown voltage BV that is relatively stable compared to the TCE oxide layer.