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采用射频磁控溅射技术成功制备出无掺杂和In掺杂的ZnO透明导电薄膜。研究了In掺杂对薄膜的结构和光电性能的影响。结果表明,In掺杂有利于提高ZnO薄膜结晶度,使薄膜表面更加致密平整;由于In3+替代了Zn2+,提供了大量的剩余电子,使薄膜的导电性质得到了很大的提高,所得薄膜的最小电阻率为4.3×10-3Ω.cm。制备的ZnO薄膜在可见光范围的透过率达到了85%,In的掺杂对透光率的影响不大。
The ZnO transparent conductive films without doping and In doping were successfully prepared by RF magnetron sputtering. The effects of In doping on the structure and photoelectric properties of the films were investigated. The results show that In doping can improve the crystallinity of ZnO film and make the surface of the film more dense and smooth. Since In3 + replaces Zn2 +, a large amount of residual electrons are provided, the conductivity of the film is greatly improved, and the minimum The resistivity is 4.3 × 10 -3 Ω · cm. The prepared ZnO thin film has a transmittance of 85% in the visible range and the doping of In has little effect on the light transmittance.