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采用无机试剂 ( Sn Cl4 · 5H2 O)为原料 ,用溶胶 -凝胶 ( Sol-Gel)法制备研制气敏传感器的 Sn O2 薄膜 ,研究了 Sn O2 薄膜的电阻随掺杂和温度的变化关系 ,并且用 XRD对 Sn O2 薄膜进行分析 .结果表明 ,掺杂和热处理温度对薄膜晶粒尺寸的大小、薄膜的结构形态均有较大的影响 ,进而影响薄膜的电导及传感器的灵敏度 .
The Sn O2 thin film was prepared by sol-gel method using Sn Cl 4 · 5H 2 O as raw material. The change of Sn O 2 thin film resistance with temperature and doping was investigated. The results show that the doping and the heat treatment temperature have great influence on the size of the film and the structure of the film, which affects the conductivity of the film and the sensitivity of the sensor.