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SI-GaAs衬底材科的热稳定性对于用直接离子注入工艺制作GaAs场效应器件及集成电路是至关重要的.本文采用变温霍耳效应测量、光注入瞬态电流谱(OTCS)和原子吸收光谱等方法研究了热稳定性差的不掺杂LEC SI-GaAs单晶.结果表明,原子吸收光谱分析发现此晶体存在6.7×10~(15)cm~(-3)Fe杂质,其他两种方法观察到一个～0.62eV深能级.文中推测这是与杂质Fe有关的深受主,认为它对不掺杂LBC SI-GaAs单晶的热稳定性可能有重大影响.
The thermal stability of SI-GaAs substrate materials is crucial for the fabrication of GaAs FETs and ICs by direct ion implantation.In this paper, the temperature-dependent Hall-effect measurements, the light-injection transient current spectra (OTCS) and the atomic Absorption spectra were used to investigate the thermal stability of undoped LEC SI-GaAs single crystals. The results show that there are 6.7 × 10 ~ (15) cm ~ (-3) Fe impurities in this crystal, and the other two Method to observe a deep level of ~ 0.62eV.This paper speculates that this is a deep acceptor associated with impurity Fe, which is believed to have a significant effect on the thermal stability of undoped LBC SI-GaAs single crystals.