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甚长波红外(VLWIR)波段富含大气湿度、CO_2含量及云层结构和温度轮廓等大量信息,是大气遥感的重要组成部分。为了满足现阶段甚长波红外探测器对读出电路高注入效率、大动态范围、稳定的探测器偏压、长积分时间等需求,设计了一种具有记忆功能背景抑制结构的共享型读出电路。该电路采用2×2四个相邻的探测器像元共用一个读出电路单元的共享缓冲直接注入级(SBDI)结构,增大了单元电路的面积,在单元内实现了具有记忆功能背景抑制结构的设计,其总积分电容达到8.8 p F,有效延长了积分时间和红外焦平面的信噪比(SNR),并改善了动态范围和对比度。基于HHNEC CZ6H 0.35μm 1P4M标准CMOS工艺,完成了电路的流片制造。仿真及测试结果表明:在50 K温度下电路功能正常,其动态范围大于90 d B,线性度优于99.9%,积分时间可达74μs,达到了设计要求。该读出电路适用于甚长波红外探测器。
Very long wave infrared (VLWIR) band is rich in atmospheric humidity, CO 2 content and cloud structure and temperature profiles and other large amounts of information, is an important part of atmospheric remote sensing. In order to meet the demand of very long-wave infrared detectors for high injection efficiency, large dynamic range, stable detector bias and long integration time, a shared readout circuit with memory function background suppression . The circuit adopts shared buffer direct injection stage (SBDI) structure with 2 × 2 four neighboring detector pixels sharing one readout circuit unit, which increases the area of the unit circuit and achieves the memory function background suppression The design of the structure, with a total integrated capacitance of 8.8 pF, effectively extends the integration time and signal-to-noise ratio (SNR) of the infrared focal plane and improves dynamic range and contrast. Based on the HHNEC CZ6H 0.35μm 1P4M standard CMOS process, the circuit chip manufacturing was completed. Simulation and test results show that the circuit functions normally at 50 K, its dynamic range is more than 90 d B, the linearity is better than 99.9% and the integration time is up to 74μs, which meets the design requirements. The readout circuit is suitable for very long wave infrared detectors.