论文部分内容阅读
一、前言近年来,化学腐蚀技术已广泛地应用于Ⅲ-Ⅴ族化合物晶体结构缺陷的测定。由于光电器件的迅速发展,InP和GaAs等已成为激光和发光器件的重要材料。此类器件的性能直接与材料完整性有关。结构缺陷特别是位错将显著地影响器件的性能。例如在半导体激光和发光管中,如果发光区或其附近有位错存在,将造成暗线或暗点,除降低效率外,还会
I. Introduction In recent years, chemical etching technology has been widely used in the determination of III-V compound crystal structure defects. Due to the rapid development of optoelectronic devices, InP and GaAs have become important materials for laser and light-emitting devices. The performance of such devices is directly related to material integrity. Structural defects, especially dislocations, can significantly affect device performance. For example, in semiconductor lasers and light-emitting tubes, if there is a dislocation in or near the light-emitting region, dark lines or dark spots will be caused. In addition to reducing the efficiency,