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Multi-walled carbon nanotubes were irradiated with 40 keV Si ion beam to a dose of 1×1017 cm-2. The multiple-way carbon nanowire junctions and the Si doping in carbon nanowires were realized. Moreover, the forma- tion processes of carbon nanowire junctions and the corresponding mechanism were studied.
Multi-walled carbon nanotubes were irradiated with 40 keV Si ion beam to a dose of 1 × 10 17 cm -2. The multiple-way carbon nanowire junctions and the Si doping in carbon nanowires were realized. Moreover, the forma tion processes of carbon nanowire junctions and the corresponding mechanism were studied.