宽可调谐双微环耦合半导体激光器的模拟研究

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为了对宽可调谐微环耦合半导体激光器进行理论研究,提出了一种新型半导体激光器动态理论模型对其动态特性进行仿真分析。激光器的有源区采用传统的时域行波法进行模拟,由于调谐带宽大于40nm,需要考虑增益谱线型,而无源区则先利用频域模型计算其频谱特性,再利用有限冲击响应数字滤波器转化到时域与有源区进行连接。通过仿真分析得出,微环的耦合系数对激光器的大信号调制具有十分重要的影响。低耦合系数可以获得极窄的线宽但是激光器大信号直接调制能力也会随之急剧劣化。仿真结果还显示出该类型激光器可以进行高速大范围波长调谐。 In order to study the wide tunable microring coupled semiconductor laser, a new dynamic model of semiconductor laser is proposed to simulate its dynamic characteristics. The active region of the laser is simulated by the traditional time-domain traveling wave method. Since the tuning bandwidth is greater than 40 nm, the gain spectral line type needs to be considered. In the passive region, the spectral characteristics of the laser are calculated by using the frequency domain model first, and then the finite impulse response digital The filter transforms to the time domain to connect with the active area. The simulation analysis shows that the coupling coefficient of the microring has a very important influence on the large signal modulation of the laser. Low coupling coefficient can get a very narrow line width, but the laser direct modulation ability will also be rapidly deteriorated. Simulation results also show that this type of laser can be a wide range of high-speed wavelength tuning.
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