本工作提出的具有频率输出的硅压力传感器是建立在CMOS环形振荡器基础上的,该环形振荡器是放置在传感器芯片的薄膜上的.由于压力压阻效应,施加的压力在薄膜上产生的机械应力改变了环形振荡器中MOSFET载流子的迁移率,从而MOSFET的漏电流及相应的环振频率成为压力的函数. The proposed silicon pressure sensor with frequency output is based on a CMOS ring oscillator that is placed on a thin film of a sensor chip and exerts pressure on the film due to the pressure piezoresistive effect Mechanical stress changes the carrier mobility of the MOSFET in the ring oscillator, so that the MOSFET leakage current and the corresponding ringing frequency become a function of pressure.