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Thermally grown amorphous SiO 2 (a-SiO 2) films were implanted at room temperature (RT) with 100 keV C-ions to 5.0×10 17 ions/cm 2.These samples were irradiated at RT with 853 MeV Pb-ions to 1.0×10 12 and 5.0×10 12 ions/cm 2.Then the samples were investigated using Transmission Electron Microscopy (TEM) at RT.Significant microstructure modifications were observed in C-doped a-SiO 2/Si samples after high energy Pb-ion irradiations,and the formation of new structures depended strongly on the Pb-ion irradiation fluences.For example,tracks in high density were observed in a 1.0×10 12 Pb/cm 2 irradiated and C-doped sample.Additionally,the length of tracks grows,and a large number of 8H-SiC nanocrystals can be seen in the film when irradiation fluence is increased to 5.0×10 12 Pb/cm 2.Possible modification processes of C-doped a-SiO 2 under swift heavy ion irradiations are briefly discussed.
Thermally grown amorphous SiO 2 (a-SiO 2) films were implanted at room temperature (RT) with 100 keV C-ions to 5.0 × 10 17 ions / cm 2. These samples were irradiated at RT with 853 MeV Pb-ions to 1.0 × 10 12 and 5.0 × 10 12 ions / cm 2.Then the samples were investigated using Transmission Electron Microscopy (TEM) at RT. Identification of microstructure modifications were observed in C-doped a-SiO 2 / Si samples after high energy Pb-ion irradiations, and the formation of new structures depended strongly on the Pb-ion irradiation fluences. For example, tracks in high density were observed in a 1.0 × 10 12 Pb / cm 2 irradiated and C-doped samples. Additionally, the length of tracks grows, and a large number of 8H-SiC nanocrystals can be seen in the film when irradiation fluence is increased to 5.0 × 10 12 Pb / cm 2. Possible modification processes of C-doped a-SiO 2 under swift heavy ion irradiations are discussed.