电感耦合等离子体(ICP)刻蚀技术是体硅深加工的一项关键技术。介绍了ICP刻蚀技术的相关概念与方法,在对Si(100)进行大量深刻蚀实验的基础上,深入分析刻蚀∕钝化周期、极板功率、SF6/C4F8气体流量和腔室压力等主要工艺参数对刻蚀侧壁垂直度的影响。通过对ICP刻蚀的刻蚀∕钝化周期和极板功率参数进行正交实验,给出了通用槽宽分别为2,5和10μm时的优化工艺参数,成功实现了三个垂直度达(90±0.02)°、高深宽比≥10、侧壁光滑的深槽结构。将优化后的工艺参数用于某陀螺仪的刻蚀实验,获得了理想的刻蚀形貌。 Inductively coupled plasma (ICP) etching is a key technology in deep processing of bulk silicon. The concepts and methods of ICP etching are introduced. Based on a large number of deep etching experiments on Si (100), the etching / passivation cycle, plate power, SF6 / C4F8 gas flow and chamber pressure Effect of main process parameters on the verticality of etched sidewalls. Through the orthogonal experiment of etch / passivation cycles and plate power parameters of ICP etching, the optimized process parameters with common slot widths of 2, 5 and 10 μm are given respectively, and three perpendicularity degrees are successfully achieved 90 ± 0.02) °, high aspect ratio ≥10, deep groove structure with smooth sidewalls. The optimized process parameters were used for the etching experiment of a certain gyroscope, and the ideal etching morphology was obtained.