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A new rare earth complex Tb(p-ClBA)_3phen was synthesized and introduced into organic light emitting devices (OLEDs) as emitting material.The Tb(p-ClBA)_3phen was doped into PVK to improve the film-forming and hole-transporting property.Two kinds of devices were fabricated.The device structure is as the following.Single-layer device:ITO/PVK:Tb(p-ClBA)_3phen /LiF/Al;double-layer device:ITO/PVK:Tb(p-ClBA)_3phen /AlQ/LiF/Al.The performances of both devices were investigated carefully.We found that the emission of PVK was completely restrained,and only the green emission was observed from the electroluminescence.The full width at half maximum (FWHM) was less than 10 nm.The highest EL brightness of the single-layer device is 25.4 cd/cm~2 at a fixed bias of 18 V,and the highest EL brightness of the double-layer device reaches 234.8 cd/cm~2 at a voltage of 20 V.
A new rare earth complex Tb (p-ClBA) _3phen was synthesized and introduced into organic light emitting devices (OLEDs) as emitting material.The Tb (p-ClBA) _3phen was added into PVK to improve the film-forming and hole-transporting The device structure is as follows. Single-layer device: ITO / PVK: Tb (p-ClBA) 3phen / LiF / Al; double-layer device: ITO / PVK: Tb -ClBA) _3phen /AlQ/LiF/Al.The performances of both devices were carefully carefully. We found that the emission of PVK was completely restrained, and only the green emission was observed from the electroluminescence. The full width at half maximum (FWHM ) was less than 10 nm. The highest EL brightness of the single-layer device is 25.4 cd / cm ~ 2 at a fixed bias of 18 V, and the highest EL brightness of the double-layer device reaches 234.8 cd / cm ~ 2 at a voltage of 20 V.