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掺硼金刚石(BDD)薄膜电极析氧电位高、背景电流小、耐腐蚀的特性,使其在电化学应用方面受到广泛关注。采用热丝化学气相沉积(HFCVD)系统,在钽基底上制备了不同掺硼质量浓度的金刚石薄膜电极,通过扫描电子显微镜(SEM)分析了薄膜表面形貌,利用循环伏安法研究了电极的电化学特性。结果表明:掺硼质量浓度为2 g/L时,制备的薄膜电极质量最好,晶粒尺寸最大,电势窗口达到3.99 V;继续增大掺硼质量浓度,粒径减小,薄膜质量变差,电势窗口逐渐减小。BDD电极在酸、盐、碱性溶液中的析氧电位分别为2.11,1.82和0.86 V,呈递减趋势。
Boron doped diamond (BDD) thin film electrodes with high oxygen evolution potential, small background current and corrosion resistance make them widely used in electrochemical applications. Different concentrations of boron-doped diamond films were prepared on a tantalum substrate by hot filament chemical vapor deposition (HFCVD). The morphology of the films was characterized by scanning electron microscopy (SEM) and the cyclic voltammetry Electrochemical properties. The results showed that when the concentration of boron is 2 g / L, the quality of the prepared thin film electrode is the best, the grain size is the largest, and the potential window reaches 3.99 V. When the concentration of boron is increased, the particle size decreases and the film quality deteriorates , The potential window is gradually reduced. The oxygen evolution potentials of BDD electrodes in acid, salt and alkaline solutions were 2.11, 1.82 and 0.86 V, respectively, showing a decreasing trend.