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采用平面霍尔效应测量方法 ,对Ta(8nm) NiFe(7nm) Cu(2. 4nm) NiFe(4. 4nm) FeMn(14nm) Ta(6nm)自旋阀多层膜进行了研究 .结果表明 ,在样品中存在着自由层和被钉扎层之间的各向异性磁电阻的“混合”效应 .与通常所采用的磁电阻测量方法相结合 ,平面霍尔效应的测量可以给出自旋阀中各向异性磁电阻以及自由层和被钉扎层的磁矩随外场变化的更多信息 .
The planar Hall-effect method was used to study the spin-valve multilayers of Ta (8nm) NiFe (7nm) Cu (2.4nm) NiFe (4nm) FeMn (14nm) Ta There is a “mixing” effect of the anisotropic magnetoresistance between the free layer and the pinned layer in the sample.With the commonly used magnetoresistance measurement method, the measurement of the plane Hall effect gives the spin-valve The anisotropic magnetoresistance and the magnetic moments of the free and pinned layers vary with the external field.