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本文研究一种新型a-SiC/a-Si PIN异质结集成型全色色敏元件的制备工艺和结构,详细讨论了色敏元件的优化设计以及响应特性、暗电流等性能。实验结果表明,由于采用宽带隙的a-SiC窗口层和分离反应室的PECVD工艺,使色敏元件的灵敏度和暗电流特性得到了明显改善。
In this paper, the preparation process and structure of a novel a-SiC / a-Si PIN heterojunction full-color sensor are studied. The optimal design of the color sensor and the response characteristics and dark current are discussed in detail. The experimental results show that the sensitivity and dark current characteristics of the color sensor are significantly improved due to the wide bandgap a-SiC window layer and the PECVD process of the separation chamber.