Study on the mechanism of perpendicular magnetic anisotropy in Ta/CoFeB/MgO system

来源 :Journal of Semiconductors | 被引量 : 0次 | 上传用户:tt24834051
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The mechanism of perpendicular magnetic anisotropy(PMA)in a MgO-based magnetic tunnel junction(MTJ)has been studied in this article.By comparing the magnetic properties and elementary composition analysis for different CoFeB-based structures,such as Ta/CoFeB/MgO,Ta/CoFeB/Ta and Ru/CoFeB/MgO structures,it is found that a certain amount of Fe-oxide existing at the interface of CoFeB/MgO is helpful to enhance the PMA and the PMA is originated from the interface of CoFeB/MgO.In addition,Ta film plays an important role to enhance the PMA in Ta/CoFeB/MgO structure. The mechanism of perpendicular magnetic anisotropy (PMA) in a MgO-based magnetic tunnel junction (MTJ) has been studied in this article. By comparing the magnetic properties and elementary composition analysis for different CoFeB-based structures, such as Ta / CoFeB / MgO , Ta / CoFeB / Ta and Ru / CoFeB / MgO structures, it is found that a certain amount of Fe-oxide existing at the interface of CoFeB / MgO is helpful to enhance the PMA and the PMA is originated from the interface of CoFeB / MgO.In addition, Ta film plays an important role to enhance the PMA in Ta / CoFeB / MgO structure.
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