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首次提出了采用Er-Ta共溅、高温退火的方法,在硅基二氧化硅表面制备高掺铒氧化钽(Er:Ta_2O_5)薄膜。利用棱镜耦合仪分析了铒掺杂浓度对Er:Ta_2O_5薄膜的折射率的影响,结果表明:Er:Ta_2O_5薄膜的折射率随着Er掺杂浓度的增加而略微降低,且所制备的薄膜没有明显的各向异性。在此基础上,成功制备出Er掺杂浓度分别为0、2.5、5、7.5 mol%的硅基Er:Ta_2O_5脊形波导,波导在1 550 nm波段可实现单模传输,通过截断法得到波导在1 600 nm波长处的传输损耗分别为0.6、1.1、2.5、5.0 d B/cm。在所制备的Er:Ta_2O_5薄膜中,尽管没有发现Er_2O_3结晶析出,但薄膜中的Er3+会影响Ta_2O_5晶体的结晶程度,进而增加波导的传输损耗。最终文中制备的掺杂浓度为2.5 mol%的硅基Er:Ta_2O_5脊形波导通过980 nm激光泵浦,在1 531 nm信号波长下达到了3.1 d B/cm的净增益。
The method of Er-Ta co-sputtering and high temperature annealing was firstly proposed for the preparation of Er-Ta2O5 thin films on the surface of Si-based silicon dioxide. The influence of the doping concentration of erbium on the refractive index of Er: Ta_2O_5 thin films was analyzed by prism coupler. The results show that the refractive index of Er: Ta_2O_5 thin films decreases slightly with the increase of Er doping concentration, and the films prepared are not obvious Anisotropy. Based on this, a Er-doped Er-Ta 2 O 5 ridge waveguide with a Er-doped concentration of 0, 2.5, 5 and 7.5 mol% was successfully prepared. The waveguide can achieve single mode transmission in the 1 550 nm band. The transmission loss at the wavelength of 1 600 nm is 0.6, 1.1, 2.5 and 5.0 d B / cm, respectively. In the prepared Er: Ta_2O_5 thin film, Er3 + in the thin film affects the degree of crystallization of the Ta_2O_5 crystal and increases the transmission loss of the waveguide even though no Er_2O_3 crystal is found. The 2.5 mol% silicon-based Er: Ta_2O_5 ridge waveguide fabricated in the final paper was pumped by a 980 nm laser and achieved a net gain of 3.1 d B / cm at a signal wavelength of 1 531 nm.