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研究了双子带占据的In_(0·52)Al_(0·48)As/In_(0·53)Ga_(0·47)As单量子阱中磁电阻的Shubnikov-de Haas(SdH)振荡效应和霍耳效应,获得了不同子带电子的浓度、迁移率、有效质量和能级位置.低磁感应强度(B<1·5T)下由迁移率谱和多载流子拟合相结合的方法得到的各子带电子浓度与通过SdH振荡得到的结果一致.在d2ρ/dB2-1/B的快速傅里叶变换谱中,观察到除了通常强烈依赖温度的对应于各子带的频率f1和f2以及f1的倍频(2f1)外,还观察到对温度不敏感的频率f1-f2.这是由于量子阱中不同子带的电子具有相近的有效质量,两个子带之间发生了强烈的磁致子带间散射.
The Shubnikov-de Haas (SdH) oscillation effect of the magnetoresistance in a single In_ (0.52) Al_ (0.48) As / In_ (0.53) Ga_ Hall effect, the concentration, mobility, effective mass and energy level position of different subbands are obtained.The combination of mobility spectrum and multi-carrier fitting is obtained under low magnetic flux density (B <1.5T) Are consistent with the results obtained by SdH oscillation.In the fast Fourier transform spectrum of d2ρ / dB2-1 / B, it is observed that in addition to the frequencies f1 and f2 corresponding generally to the respective sub-bands, which are generally strongly temperature dependent, As well as the frequency doubling (2f1) of f1, the temperature-insensitive frequency f1-f2 was also observed because of the similar effective mass of the electrons in the different subbands in the quantum well and the strong magnetism between the two subbands To sub-band scattering.