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采用高电流注入条件下的载流子扩散方程和复折射率波导模型情况下的亥姆霍兹方程,对980nm高功率激光二极管外延材料的非对称和对称波导结构的光吸收损耗进行了理论计算。采用低压金属有机化学气相外延技术制备了两种波导结构的外延材料,并制作了激光器件,进行了光电特性测试和对比分析。理论计算和实验结果表明:与对称波导结构相比,非对称波导结构外延材料并未减小光吸收损耗,而是减小了串联电阻,因而降低了器件的焦耳热损耗,从而提高器件的电光效率。
Using the Helmholtz equation with carrier diffusion equation under high current injection conditions and complex refractive index waveguide model, the optical absorption loss of asymmetric and symmetrical waveguide structure of 980nm high power laser diode epitaxial material was theoretically calculated . Epitaxial materials with two kinds of waveguide structures were fabricated by low pressure metal organic chemical vapor phase epitaxy, and laser devices were fabricated. The photoelectric properties were tested and compared. Theoretical calculations and experimental results show that asymmetric waveguide structure does not reduce the optical absorption loss but reduces the series resistance compared with the symmetrical waveguide structure, thus reducing the Joule heat loss of the device and improving the device’s electro-optic effectiveness.