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在脉冲非平衡磁控溅射环境中,通过提高脉冲靶电压(分别为600、700及800 V)使工作气体Ar获得3种不同强度的异常辉光放电状态(单脉冲峰值靶功率密度分别为10、30及70 W/cm2),并分别制备Cr薄膜。利用SEM、AFM、XRD及TEM等方法研究、比较了非平衡磁控溅射Cr薄膜的微观结构在不同Ar气脉冲异常辉光放电强度条件下的差异。结果表明,随Ar气脉冲异常辉光放电强度的增强:Cr薄膜沉积速率显著提高,薄膜表面粗糙度略有增大,但表面颗粒未出现长大现象,且尺寸均匀、细小,择优生长的Cr(110)晶面的衍射峰强度明显降低,结晶效果逐渐降低。不同异常辉光放电强度条件下制备的Cr薄膜均以柱状方式生长,微观组织呈现出纳米级尺度的晶粒(直径5～10 nm)镶嵌式分布的形态。
In pulsed unbalanced magnetron sputtering, three different intensity anomalous glow discharge states were obtained for working gas Ar by increasing the impulse target voltage (600, 700 and 800 V, respectively) (single-pulse peak target power densities were 10, 30 and 70 W / cm2), respectively, and Cr films were prepared. SEM, AFM, XRD and TEM methods were used to study the differences of microstructure of Cr film obtained by unbalanced magnetron sputtering under different Gamma discharge abnormalities. The results show that with the increase of Ar gas pulse anomalous glow discharge intensity, the deposition rate of Cr thin film is significantly increased, the surface roughness of the thin film is slightly increased, but the growth of the surface particles does not appear and the uniform, fine and preferentially grown Cr (110) crystal face diffraction peak intensity decreased significantly, the crystallization effect gradually decreased. Cr films grown under different abnormal glow discharge strengths grow in a columnar manner, and the microstructure shows a mosaic-like distribution of nanoscale-sized grains (5 ~ 10 nm in diameter).