目前,半导体力敏传感器大多采用在n型硅单晶上进行硼注入或硼扩散,形成四个扩散电阻,将这四个扩散电阻连接成惠斯登电桥,当无压力作用在硅片时,理想情况电桥输出为零,当有压力作用时,电桥平衡被打破,输出信号的大小由压力决定。由于该力敏传感器利用p-n结隔离方式进行工作,因此,该力敏传感 At present, most of the semiconductor force sensors use boron implantation or boron diffusion on an n-type silicon single crystal to form four diffusion resistances. The four diffusion resistances are connected into a Wheatstone bridge. When no pressure is applied on the silicon wafer Ideally the bridge output is zero. When pressure is applied, the balance of the bridge is broken and the magnitude of the output signal is determined by the pressure. Since the force-sensitive sensor uses a p-n junction isolation mode of operation, the force-sensitive sensor