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A sub 0.1μm asymmetric halo doping SOI-MOSFET isinvestigated and optimized by simulation. The influences of silicon film thickness, asymmetric halo length and asymmetric halo doping concentration on the tuing-on current, tuing-off current and threshold voltage are analyzed. A fairly good result is obtained by a fast simulation method, i.e.Greedy algorithm. It behaves with high drive ability,low leakage and high Ion/Ioff ratio, thus is suitable to be used in the high performance and low power circuits.