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A low-temperature GaN (LT-GaN) nucleation layer is grown on a patteed sapphire substrate (PSS) using metal- organic chemical vapor deposition (MOCVD).The surface morphology of the LT-GaN is investigated and the selective nucleation phenomenon in the growth process of the LT-GaN nucleation layer is discovered.Meanwhile, effects of thickness of the LT-GaN and the annealing process on the phenomenon are also discussed.A patte model is also proposed to analyze the possible mechanisms in atomic scale.