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宽条形大功率半导体激光器(LD)存在光谱温漂系数大、光谱宽度宽的缺点,为了改善宽条形大功率半导体激光器的光谱特性,采用一种体光栅(VBG)离轴外腔方法实现了宽条形大功率半导体激光器光谱特性的明显改善和高效率工作.宽条形半导体激光器的外腔结构主要包括激光器输出光束的快、慢轴准直光学透镜和离轴放置的体光栅.宽条形半导体激光器的激射条宽为100μm,当激光器工作电流为4.0 A时,外腔激光器的输出功率高达3.4 W,斜率效率为1.0 W/A,光谱宽度由自由出射条件下的2~3 nm减少为0.2 nm,峰值波长的温漂系数小于0.015 nm/℃.
The wide strip high power semiconductor laser (LD) has the disadvantages of large spectral temperature drift coefficient and wide spectral width. In order to improve the spectral characteristics of a wide strip high power semiconductor laser, a volume grating (VBG) off-axis external cavity method is used The wide-stripe high-power semiconductor laser significantly improves the spectral characteristics and high-efficiency work.The wide-stripe semiconductor laser’s external cavity structure includes the laser output beam of fast and slow axis collimating optical lens and off-axis body grating placed wide When the operating current of the laser is 4.0 A, the output power of the external cavity laser is up to 3.4 W, the slope efficiency is 1.0 W / A, and the spectral width is from 2 to 3 nm is reduced to 0.2 nm, and the temperature drift coefficient of the peak wavelength is less than 0.015 nm / ° C.