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半导体超晶格是当代固体物理学的新生长点和重要前沿领域。它是以具有各种人工剪裁能带结构的半导体低维电子系统(二维、一维和零维)为其主要研究对象,涉及半导体物理、材料和器件的综合性研究领域。“半导体超晶格微结构”的研究属国家自然科学基金委员会重大基金项目,它以探索、开发新一代固态电子、光电子器件作为研究工作的着眼点;以生长超薄、陡变和大面积均匀的超晶格、多层异质结等低维量子结构的分子束外延(MBE)和金属有机化合物气相淀积(MOCVD)等超薄层材料生长手段为技术基础;着重开展半导体超晶格低维系统与普通三维固体不同的新物理现象和效应及其潜在的应用前景方面的基础研究;研究和探索新一代超晶格量子器件的新原理、新模式和新结构。本项目的总体设想是要在全国范围内组织起具有国内第一流水平,国际先进水平的,对半导体超晶格量子阱材料、物理和器件进行综合性基础研究的科研实体;经过“七五”和“八五”期间的工作,应当将我国在该领域内的基础研究整体水平推进到国际先进行列,并且在某些专题研究方面应当做出具有特色的,国际领先的研究成果。
The semiconductor superlattice is a new growth point and an important frontier field of contemporary solid physics. It is based on low-dimensional electronic systems (two-dimensional, one-dimensional and zero-dimensional) of semiconductors with a variety of artificially tailored energy band structures, and focuses on the comprehensive research of semiconductor physics, materials and devices. The research of “semiconductor superlattice microstructure” is a major fund project of the National Natural Science Foundation of China. It explores and develops a new generation of solid-state electronic and optoelectronic devices as the focus of its research work. In order to grow thin, steep and large area uniform Superlattices, multilayer heterojunctions and other low-dimensional molecular structure of molecular beam epitaxy (MBE) and metal organic compound vapor deposition (MOCVD) and other thin-layer material growth means for the technical basis; focus on the semiconductor superlattice low-dimensional System and ordinary three-dimensional solid new physical phenomena and effects and its potential applications in the basic research; research and explore a new generation of super-lattice quantum devices new principles, new models and new structure. The overall idea of this project is to organize research institutes that have the first-class level and the international advanced level in China and conduct comprehensive basic research on semiconductor superlattice quantum well materials, physics and devices. After the “Seventh Five-year Plan” And “Eighth Five-Year Plan” period, the overall level of basic research in our field in this field should be advanced to the international advanced level, and leading research results of distinctive and international character should be made on some special topics.