论文部分内容阅读
用分子束外延技术在P型PbTe[100]衬底上成功地生长出Pb_(0.970)Eu_(0.030)Se_(0.016)Te_(0.984)/Pb_(0.970)Eu_(0.030)Se_(0.016)Te_(0.984)双异质结。为得到发射波长在2～4μm波段的半导体激光器,通过控制有源区Eu的组份(x值)来调节有源区的禁带宽度。经扫描电子显微镜分析及电学特性的测量,证明Pb_(1-x)Eu_xSe_yTe_(1-y)双异质结结构均匀完整,结特性明显。
(0.970) Eu_ (0.030) Se_ (0.016) Te_ (0.984) / Pb_ (0.970) Eu_ (0.030) Se_ (0.016) Te_ (0.016) was successfully grown on P-type PbTe [100] 0.984) double heterojunction. In order to obtain a semiconductor laser with a wavelength in the range of 2 to 4 μm, the forbidden band width of the active region is adjusted by controlling the composition (x value) of the active region Eu. The results of scanning electron microscopy and electrical measurements show that the structure of Pb_ (1-x) Eu_xSe_yTe_ (1-y) double heterostructure is uniform and complete, and the junction characteristics are obvious.