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利用喇曼光谱和光致发光谱 ,对采用氢化气相外延淀积方法在MOCVDGaN衬底上生长的掺碳GaN样品的光学性质进行了研究 .结果发现C3H8流量的增加导致载流子浓度的升高 ,喇曼谱出现蓝移 ,E1(LO)声子的Raman强度变弱 .同时光致发光谱中蓝光带和黄光带发光强度随着掺碳浓度的增加先增强后减弱 ,这与掺杂碳的自补偿效应有关 .高碳掺杂量的GaN材料的结构与光学性质均显著下降 .
The optical properties of carbon-doped GaN samples grown on MOCVDGaN substrates by hydrogenated vapor phase epitaxial deposition were studied by Raman spectroscopy and photoluminescence spectroscopy. The results show that the increase of C3H8 flow rate leads to the increase of carrier concentration, The Raman intensity of the E1 (LO) phonon decreases with the blue shift in the Raman spectrum, and the luminescence intensities of the blue band and the yellow band in the photoluminescence spectrum first increase and then decrease with the increase of the doping concentration of carbon, Of the self-compensation effect.The structure and optical properties of GaN materials with high carbon content are significantly decreased.