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本文采用射频磁控反应溅射法于常温下在硅片和玻璃基片上制备ZnO和掺铝ZnO薄膜,将铝丝置于ZnO靶材上共同溅射来达到掺杂的效果,利用不同长度的铝丝以获得不同的掺杂量。通过X射线衍射法对薄膜进行结构分析,利用紫外-可见分光光度计获得薄膜的透过率光谱,霍尔效应仪测量薄膜的电学性能。发现所制备的样品在可见光区域透过率达到80%以上,达到了透明膜的要求;掺Al后的ZnO膜电阻率最低达到了4.25×10-4Ω·cm;结构表征发现样品的(002)晶面有明显衍射峰。基于包络线方法通过透射谱拟合计算了薄膜样品的折射率和厚度。
In this paper, ZnO and Al-doped ZnO films were prepared by RF magnetron reactive sputtering on silicon and glass substrates at room temperature. Al wires were sputtered on ZnO targets to achieve the effect of doping. Aluminum wire to obtain different doping amount. The structure of the film was analyzed by X-ray diffraction. The transmittance spectrum of the film was obtained by UV-visible spectrophotometer. The Hall effect was measured by the Hall effect instrument. The results show that the transmittance of the prepared sample in the visible region reaches more than 80%, which meets the requirements of the transparent film. The resistivity of the ZnO film doped with Al is 4.25 × 10-4Ω · cm, the lowest is (002) Crystal surface has obvious diffraction peaks. The refractive index and thickness of the film samples were calculated by transmission spectrum fitting based on the envelope method.