美国第三届晶体生长会议于1975年7月开了五天,除全体会议之外,共分16个小组进行活动,其中有4个小组谈到了红外材料。在异质外延组中美国霍尼威尔公司人员介绍了液相外延碲镉汞材料新工艺,据说其优点是合金膜质量好,生长温度低,组份均匀性较好,可直接在绝缘衬底上生长。生长时熔融料和所得固体均处于HgTe-CdTe假二元相图中。从二元合金熔液中外延生长,可用两种方法:倾斜法和滑动法。生长条件不同时,膜的性能有所变化。用过的衬底有CdTe、Si、蓝宝石和尖晶石,而以CdTe为主,在其上用两种方法均能长出所需组分和厚度的良好液相外延膜。所谓良好的膜是指膜完全覆盖衬底,附着力好。而用其他衬底时,则薄外延膜的生长不易控制,衬底和熔料间会出现不良的化学反应。而在CdTe上长的膜厚度可控,表面光滑。长好的膜用目视和金相方法检验结构和质量。又用电子束微探针分析了样品表面和 The Third American Conference on Crystal Growth opened five days in July 1975, in addition to plenary session, is divided into 16 groups to carry out activities, of which four groups talked about the infrared material. In the heteroepitaxy group, Honeywell Company introduced the new technology of liquid phase epitaxy HgCdTe, which is said to have the advantages of good quality of alloy film, low growth temperature and good uniformity of composition, and can be directly applied to the insulation lining Grow on the bottom. Both the melt and the resulting solid were in the HgTe-CdTe pseudo-binary phase diagram during growth. Epitaxial growth from the binary alloy melt can be used in two ways: tilt and slip method. Different growth conditions, the membrane performance has changed. The used substrates are CdTe, Si, sapphire and spinel whereas the CdTe-based ones are good liquid-phase epitaxial films capable of growing the desired composition and thickness by both methods. The so-called good film refers to the film completely covered substrate, good adhesion. When other substrates are used, the growth of the thin epitaxial film is not easy to control and undesirable chemical reactions occur between the substrate and the melt. In CdTe long film thickness controllable, smooth surface. Long and good film with visual and metallographic methods to test the structure and quality. The surface of the sample was analyzed by electron beam microprobe