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为了合成高热电性能的 n型 Si C基材料 ,尝试用过渡塑性相工艺对 Si C基复合材料进行了 Ti掺杂的实验。当以纳米级 Si C为原料 ,并选择合适的保温时间及温度 ,室温时功率因子 f P 可达 1.5× 10 -5W.m.K-2 ,40 0℃时上升至1.5× 10 -4W.m.K-2 ,与聚碳硅烷浸渍法合成的样品相比 ,f P 提高约 10 0倍。X射线衍射谱及扫描电镜结果显示 ,纳米Si C原料与微米原料相比 ,更易于烧结 ,Ti掺杂入 Si C的浓度更高 ,因而 Seeback系数有显著提高。
In order to synthesize n-type Si C-based materials with high thermoelectric properties, experiments on Ti-doping of Si-C-based composites by means of a transition plastic phase process were attempted. When using nanoscale Si C as raw material and choosing the proper holding time and temperature, the power factor f P can reach 1.5 × 10 -5 W · mK-2 at room temperature and rise to 1.5 × 10 -4 W.mK- 2, compared with polycarbosilane synthesis samples, f P increased by about 10 0 times. X-ray diffraction (XRD) and scanning electron microscopy (SEM) results show that the SiC material is easier to sinter than the micron material and the TiC content is higher than that of the Si material. As a result, the Seeback coefficient is significantly increased.