在制作半导体器件时采用的等离子体工序中带电时 ,由于电子屏蔽效应而栅氧化膜受到损伤。ＮＥＣ开发了可有效分析其损伤程度的新方法。采用等离子体的腐蚀技术其加工精度上乘 ,但另一方面是由于带电而栅氧化膜受到损伤 ,元件成品率下降、可靠性劣化。而随着ＬＳＩ元件尺寸减小 The gate oxide film is damaged due to the electron shielding effect when it is charged in the plasma process used to fabricate the semiconductor device. NEC has developed a new method that can effectively analyze the extent of its damage. Using plasma etching technology its processing accuracy, but on the other hand is charged by the gate oxide film is damaged, the device yield decline, the reliability of the deterioration. As the LSI device size decreases