借助于 XPS分析技术 ,首次研究了 MOS结构栅 Si O2 中引入 N后的结键模式。结果表明 ,N主要以Si-N而非 Si-O-N结键形式存在于栅 Si O2 中。含 N MOS介质抗辐射 /热载流子损伤能力得以提高的根本原因是 Si-N结键替换部分对辐射敏感的 Si-O应力键 With the help of XPS analysis technology, the bonding mode of Si in MOS gate Si was firstly studied. The results show that N mainly exists in the gate Si O2 in the form of Si-N rather than Si-O-N bonds. The fundamental reason why the ability of anti-radiation / hot carrier containing N-MOS media to improve damage is improved is that Si-N junction replaces part of the radiation-sensitive Si-O stress bond