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滤波器作为通信系统中必不可少的微波无源器件[1]。滤波器的性能指标和体积直接影响整个通信系统的性能和体积。研制小型化和高性能的滤波器已经成为主要趋势。本章主要介绍一个毫米波段MEMS(Micro-Electro-Mechanical System)滤波器的设计和相关MEMS工艺的制作流程,谐振器采用单层硅基片集成(Substrate Integrated Waveguide,SIW)结构,该滤波器实现了小型化、集成化以及高Q值。输入输出采用共面波导-微带转换结构,易于探针测试台的快速测试滤波器并且方便与外部电路集成。滤波器设计采用双模提取法确定耦合结构尺寸。关键工艺为体硅加工的ICP(Inductively Coupled Plasma)深硅刻蚀。本文设计制作的滤波器指标为:中心频率为35 GHz,1d B带宽2G,驻波小于1.5。最终滤波器芯片尺寸为10.2 mm×4 mm×0.4 mm。
Filter as a communication system essential microwave passive components [1]. Filter performance and size directly affect the performance and volume of the entire communication system. The development of miniaturized and high performance filters has become a major trend. This chapter mainly introduces the design of a MEMS (Micro-Electro-Mechanical System) filter and the fabrication process of the related MEMS process. The resonator uses the structure of the SIW (Substrate Integrated Waveguide) Miniaturization, integration and high Q value. Input and output using coplanar waveguide - microstrip conversion structure, easy to probe test bench fast test filter and easy integration with external circuits. Filter design using dual-mode extraction method to determine the size of the coupling structure. The key process for bulk silicon processing ICP (Inductively Coupled Plasma) deep silicon etching. The design of the filter in this paper indicators: the center frequency of 35 GHz, 1d B bandwidth 2G, standing wave is less than 1.5. The final filter chip size is 10.2 mm × 4 mm × 0.4 mm.