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单壁碳纳米管具有优异的电子学特性,是制备新一代高性能集成电路的重要材料.碳纳米管芯片之路存在诸多挑战,包括直径和手性的控制生长方法、金属性和半导体性单壁碳纳米管的分离方法、器件加工与集成方法等.这些课题从本质上讲大多属于化学问题,因此碳纳米管芯片研究为化学家们提供了新的机遇与挑战.过去10年来,我们围绕单壁碳纳米管的轴向能带工程这一研究思路,开展了一系列碳纳米管芯片的基础探索工作,发展了若干有效的单壁碳纳米管局域能带的调控方法,包括温度阶跃生长法、脉冲供料生长法、基底调控法以及形变调控法等.本文系统地阐述了这些局域能带调控方法,为使读者对该领域的研究进展有一个较为全面的了解,文中对其他课题组开展的代表性工作也给予了综述性介绍.
Single-walled carbon nanotubes with excellent electronic properties, is the preparation of a new generation of high-performance integrated circuits, an important material.Carbon nanotube chip road there are many challenges, including diameter and chiral control of growth methods, metal and semiconductor single Wall carbon nanotube separation methods, device processing and integration methods, etc. These topics are mostly chemical problems by nature, so carbon nanotube chip research provides chemists with new opportunities and challenges over the past 10 years, we have been around Single-walled carbon nanotubes axial energy banding of this research ideas, carried out a series of basic research work on the carbon nanotube chip, the development of a number of effective single-walled carbon nanotubes local band control methods, including the temperature order Jump growth method, pulse feed growth method, the substrate control method and the deformation control method, etc. This article systematically elaborated these local energy band control methods, in order to make the reader a more comprehensive understanding of the research progress in this field, Representative work carried out by other research groups also gave a comprehensive introduction.