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通过实验,证明了n/n~+外延层经Sirtl浸蚀剂浸蚀后,所形成的“雾状”微缺陷,可导至p-n结的软击穿和低击穿,是降低器件成品率的重要原因之一.针对此种情况,提出了三种在外延层正面吸除杂质的方法:氧化-剥层-腐蚀法,硼扩散结吸收法及磷硅玻璃吸取等,并探索了其工艺条件.实践证明,三种措施都可在不同程度上降低外延层中“雾状”微缺陷的影响而提高器件成品率.为从根本上消除外延层中的“雾状”微缺陷,试建了一套亮片生产工艺,可将外延层中“雾状”微缺陷的密度,降到远低于10~5厘米~(-2)以下而获得亮片.在用此类外延片制作器件时,其管芯成品率可成倍提高.
The experimental results show that the “haze” microdefects formed after the n / n ~ + epitaxial layer is etched by the Sirtl etchant can lead to soft breakdown and low breakdown of the pn junction, which reduces the device yield .According to this situation, three methods for removing impurities in the front of the epitaxial layer are proposed: oxidation-delamination-etching method, boron diffusion junction absorption method and absorption of phosphosilicate glass, Conditions.It has been proved that all the three measures can reduce the influence of “haze” microdefects in the epitaxial layer to a certain extent and improve the device yield.To fundamentally eliminate the “haze” microdefects in the epitaxial layer, A set of sequins production process, the epitaxial layer can be “misty” microdefects density, well below 10 ~ 5 cm ~ (2) and get sequins.In the use of such epitaxial wafer device, Its die yield can be doubled.