用CH_4,NH_3和H_2为反应气体,利用等离子体增强热丝化学气相沉积系统在不同偏压电流的条件下制备了碳纳米尖端,并用扫描电子显微镜和显微Raman光谱仪对碳纳米尖端进行了研究.结果表明碳纳米尖端是石墨结构,随着偏压电流的增大,碳纳米尖端的顶角减小,生长速率增大.结合有关等离子体和溅射的理论,分析讨论了碳纳米尖端的形成和碳纳米尖端的生长随偏压电流的变化. Carbon nanotubes were prepared by plasma enhanced hot filament chemical vapor deposition (CVD) at different bias currents using CH_4, NH_3 and H_2 as reactant gases. The carbon nanotubes were investigated by scanning electron microscopy and Raman microscopy The results show that the carbon nanotube tip is graphite structure, with the increase of bias current, the apex angle of carbon nanotube decreases and the growth rate increases.Combining with the theory of plasma and sputtering, Formation and variation of carbon nanotube growth with bias current.