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运用X射线衍射分析、红外光谱分析、扫描电镜分析和透射光谱分析 ,研究了GeSe2 非晶半导体薄膜经5 14.5nm波长的氩离子激光辐照后的结构及性能变化。实验结果表明 ,经热处理和激光辐照后 ,薄膜的光学吸收边均移向短波长处 ,这种移动随着辐照激光强度和辐照时间的增加而增大 ,并且在退火薄膜中是可逆的。扫描电镜分析结果表明 ,薄膜在激光辐照后有微晶析出 ,这种微晶的析出量随着辐照激光强度的增强而增加。
The structure and properties of GeSe2 amorphous semiconductor films irradiated by argon ion laser with wavelength of 5 14.5 nm were studied by X-ray diffraction, infrared spectroscopy, scanning electron microscopy and transmission spectroscopy. The experimental results show that after the heat treatment and laser irradiation, the optical absorption edge of the film all moves to the short wavelength, and this movement increases with the increase of irradiation laser intensity and irradiation time and is reversible in the annealing film . Scanning electron microscopy analysis showed that the film crystallized after laser irradiation. The amount of precipitated microcrystalline precipitates increased with the increase of laser irradiation intensity.