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从理论角度定量地研究了量子点垂直腔表面发射激光器(QD-VCSELs)中GaNAs应变补偿层对InAs/GaAs量子点阵列生长质量的改善作用,得出了不同补偿浓度和补偿位置对补偿效果影响的规律,得到了确定最佳补偿参数的途径.为长波长(1.2～1.6μm)QD-VCSELs中量子点有源区的制备提供了理论指导.
The effect of GaNAs strain compensation layer on the quantum yield of InAs / GaAs quantum dot array in quantum dot vertical cavity surface emitting lasers (QD-VCSELs) has been quantitatively studied theoretically. The effects of different compensation concentrations and compensation locations on the compensation effects have been obtained , We get the way to determine the best compensation parameters and provide theoretical guidance for the preparation of quantum dot active region in long wavelength (1.2 ~ 1.6μm) QD-VCSELs.