多晶硅目前正广泛地应用于大规模集成电路、P-N结器件和太阳电池等领域之中,但是,由于多晶硅中存在着大量的晶粒间界,晶粒间界既是多数载流子输运的阻挡势垒,又是少数载流子的陷井和复合中心,所以,晶粒间界的存在严重地影响着多晶硅及其器件的电学特性。然而,有些掺杂原子在多晶硅晶粒间界的分凝会使多晶硅的物理和电学特性得到改善,并为找到降低和消除多晶硅晶粒间界的影响的方法指明方向。 Polycrystalline silicon is currently widely used in the fields of large scale integrated circuits, PN junction devices and solar cells. However, due to the large number of grain boundaries in the polycrystalline silicon, the intergranular barrier is not only the transport of majority carriers Potential barrier is a trapping and recombination center of minority carriers. Therefore, the existence of grain boundaries seriously affects the electrical characteristics of polysilicon and its devices. However, the segregation of some dopant atoms in the boundaries of polycrystalline grains improves the physical and electrical properties of polycrystalline silicon and points the way to finding ways to reduce and eliminate the effects of polycrystalline grain boundaries.