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A new planar InGaAs/InP avalanche photodiode (APD) is proposed and fabricated,which incorporates a high reflective AlGaInAs/InP distributed Bragg reflector (DBR) to improve its responsivity.The fabricated APD exhibits a low dark current of less than 3nA at M =10 and high responsivity of 0.92A/W at M =1.The gain bandwidth product of the device is above 80 GHz.The APD receiver exhibits a sensitivity of over-26 dBm at BER =10-12,which is sufficient for 10 Gb/s communication systems.