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建立了SiGe HBT热电反馈模型,对基区Ge组分矩形分布、三角形分布和梯形分布的SiGe HBT的热特性进行研究。结果表明,在Ge总量一定的前提下,Ge组分为三角形和梯形分布结构的SiGe HBT峰值温度较低、温差较小,温度分布的均匀性优于Ge组分矩形分布结构的SiGeHBT,具有更好的热特性。对不同Ge组分分布下器件增益与温度的依赖关系进行研究,发现当基区Ge组分为三角形和梯形分布时,随着温度升高,器件增益始终低于Ge组分矩形分布的器件,且增益变化较小,提高了器件的热学和电学稳定性,扩大了器件的应用范围。
A SiGe HBT thermoelectric feedback model was established to study the thermal characteristics of SiGe HBTs with rectangular distribution, triangular distribution and trapezoidal distribution of Ge components. The results show that the peak temperature of SiGe HBT with Ge composition in triangular and trapezoidal distribution structure is lower, the temperature difference is smaller and the uniformity of temperature distribution is better than that of SiGeHBT with Ge composition rectangular distribution, Better thermal characteristics. The dependence of device gain and temperature on the distribution of different Ge components is studied. It is found that when the Ge component of the base region is triangular and trapezoidal, the device gain is always lower than that of the Ge component rectangular distribution as the temperature increases. And the change of gain is small, which improves the thermal and electrical stability of the device and enlarges the application range of the device.