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杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口,提高大功率半导体激光器的输出功率。以Zn3As2为扩散源,采用闭管扩散方式,在550℃下对650nm半导体激光器的外延片进行了一系列Zn杂质扩散诱导量子阱混杂的实验。实验发现,随着扩散时间从20～120min,样品光致发光(PL)谱蓝移偏移增加,峰值波长蓝移53nm;当扩散时间超过60min后,样品的PL谱中不仅出现了常见的蓝移峰,同时还出现了红移峰,峰值波长红移32nm。分析表明PL谱蓝移来自Zn扩散引起的AlGaInP/GaInP间的量子阱混杂;红移来自Zn杂质扩散对样品中Ga0.51In0.49P缓冲层的影响。还研究了扩散温度(550℃)和扩散时间对样品晶体品质的影响,并在理论上计算了AlGaInP/GaInP量子阱混杂中的Al-Ga的互扩散系数。
Impurity diffusion-induced quantum well hybridization can be used to make cavity non-absorption window to improve the output power of high-power semiconductor lasers. Using Zn3As2 as the diffusion source, a series of Zn impurity diffusion-induced quantum well hybridization experiments were carried out on the epitaxial wafer of 650nm semiconductor laser at 550 ℃ by closed-tube diffusion method. The experimental results show that with the diffusion time from 20 to 120 min, the blue shift of the photoluminescence (PL) spectrum of the sample increases and the peak wavelength shifts blue by 53 nm. When the diffusion time exceeds 60 min, not only the common blue Shift peak, but also appeared red shift peak, peak wavelength red shift 32nm. The results show that the blue shift of PL spectra is caused by the quantum well hybridization between AlGaInP and GaInP caused by Zn diffusion. The red shift is caused by the diffusion of Zn impurity on the Ga0.51In0.49P buffer layer in the sample. The effects of diffusion temperature (550 ℃) and diffusion time on the crystal quality of the samples were also studied. The interdiffusion coefficient of Al-Ga in AlGaInP / GaInP quantum well was calculated theoretically.