本文提出了Ｗ波段Ｇｕｎｎ管谐波型光控振荡器的设计方案，该方案在振荡器的基波腔内填充本征半导体Ｓｉ片，并通过光纤将半导体激光器产生的光束耦合到Ｓｉ片，以达到光对振荡器工作频率的控制，在实验中采用波长为０．８６３μｍ的激光照射Ｓｉ片，取得了光控频率达７ＭＨｚ的结果。 In this paper, the design scheme of W-band Gunn-tube harmonic optical oscillator is proposed. In this method, an intrinsic semiconductor Si wafer is filled in the fundamental wave cavity of the oscillator, and the beam generated by the semiconductor laser is coupled to the Si wafer through an optical fiber. The control of the working frequency of the oscillator was achieved. In the experiment, the Si film was irradiated by the laser with a wavelength of 0.863μm, and the result showed that the light-control frequency was 7MHz.