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掺入摩尔分数为1%In2O3和0.5%Er2O3,从n(Li)/n(Nb)比为0.94,1.05,1.20,1.38的熔体中用提拉法生长In:Er:LiNbO3(In:Er:LN)晶体。测试了晶体的紫外–可见吸收光谱、荧光光谱和抗光损伤阈值。结果表明:随着n(Li)/n(Nb)增加,晶体吸收边发生紫移,晶体的荧光发光强度和晶体抗光损伤阈值增强。n(Li)/n(Nb)为1.38的近化学计量比晶体的荧光发光强度和抗光损伤阈值最高。对不同n(Li)/n(Nb)的晶体的吸收边移动和抗光损伤阈值和荧光发光强度增强的机理进行讨论。
In: Er: LiNbO3 (In: Er: LiNbO3) was grown by a Czochralski method from a melt having a n (Li) / n (Nb) ratio of 0.94, 1.05, 1.20, 1.38 with 1 mol% : LN) crystal. The UV-Vis absorption spectra, fluorescence spectra and anti-photodamage thresholds of the crystals were tested. The results show that with the increase of n (Li) / n (Nb), the absorption of the crystal shifts purplely, and the fluorescence intensity and crystal damage threshold of the crystal increase. Nearly stoichiometric crystal with n (Li) / n (Nb) of 1.38 shows the highest fluorescence intensity and light damage threshold. The mechanism of absorption edge shift and anti-photodamage threshold and fluorescence enhancement of different n (Li) / n (Nb) crystals was discussed.