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研究了浅沟槽隔离 (STI)工艺的各主要工艺步骤 :沟槽的形成、沟槽顶角的圆滑、沟槽填充以及化学机械抛光平坦化 .使用器件模拟软件 Medici和 Davinci分析了 STI结构的隔离性能以及沟槽隔离 MOSFET的 Kink效应和反窄宽度效应
The main process steps of shallow trench isolation (STI) process are studied: formation of trenches, smoothing of trench apexes, filling of trenches and chemical mechanical polishing planarization.Using Medici and Davinci, a device simulation software, Isolation performance and trench isolation MOSFET Kink effect and anti-narrow width effect